Analysis of subthreshold swing in junctionless double gate MOSFET using stacked high-k gate oxide

In this paper, the subthreshold swing was observed when stacked high-k gate oxide used for a junctionless double (JLDG) MOSFET. For purpose, model presented using series-type potential derived from Poisson equation. The results of in paper were good agreement with two-dimensional numerical values and those other papers. Using model, variation channel length, silicon thickness, dielectric constant material as parameter. As result, reduced materials film. case asymmetric structure, can be than that symmetric JLDG MOSFET bottom film greater top could also by applying voltage lower voltage.